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NVE Corporation Product Announcement

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NVE Corporation Product Announcement Product Announcement
NVE Corporation Introduces New Current-Over-Trace Sensor

EDEN PRAIRIE, Minn.—January 31, 2018—NVE Corporation today announced the AAL024-10E analog magnetic field sensor. The new sensor combines small size, high sensitivity, and cross-axis sensitivity for an ideal current-over-trace sensor.
 
The new sensor uses NVE’s patented spintronic Giant Magnetoresistance (GMR) materials. A Wheatstone bridge magnetometer configuration provides temperature stability and cancels ambient magnetic fields. 

High sensitivity provides 300 millivolts per amp typical levels with a five-volt power supply. The sensor is inherently omnipolar for AC or DC measurements.

The AAL024-10E is precise and accurate. Key specifications include:
  • 3.6 millivolts per volt per oersted typical magnetic sensitivity
  • 1.5 to 10.5 oersted linear range
  • less than 4% nonlinearity
  • less than 2% hysteresis

The part is packaged in an ultraminiature 2.5 by 2.5 by 0.8 millimeter TDFN6.

AAL024-10E Sensors are in stock for immediate delivery, and priced at $2.57 each in 1,000-piece quantities. Datasheets and more information are available at www.nve.com.

An evaluation board, the AG903-01E, is also available. The boards include four AAL024-10E current sensors on a circuit board with four different current-trace configurations. These boards support noncontact current measurement up to five amps AC or DC. The boards measure two by two inches (50 by 50 millimeters), and include screw connections for 14 to 30 gauge wire for the current to be measured. Evaluation boards are available now and priced at $75 each.

NVE is a leader in the practical commercialization of spintronics, a nanotechnology that relies on electron spin rather than electron charge to acquire, store and transmit information. The company manufactures high-performance spintronic products including sensors and couplers that are used to acquire and transmit data. NVE has also licensed its spintronic magnetoresistive random access memory technology, commonly known as MRAM.

Statements used in this announcement that relate to future plans, events, or performance are forward-looking statements that are subject to certain risks and uncertainties including, among others the risk factors listed from time to time in our filings with the SEC, including our Annual Report on Form 10-K and other reports filed with the SEC.

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